منابع مشابه
Vapor-phase growth of amorphous materials: A molecular-dynamics study.
We have studied the vapor-phase growth of a mixture of two differently sized Lennard-Jones particles as a function of relative atomic size and substrate temperature, and we investigated what influence the substrate has on the growth. As a function of relative atomic size there is an abrupt change from well-layered crystalhne growth to a nonlayered disordered growth. This transition is not affec...
متن کاملStressed solid-phase epitaxial growth of ion-implanted amorphous silicon
The kinetics of stressed solid-phase epitaxial growth (SPEG), also referred to as solid-phase epitaxy, solidphase epitaxial regrowth, solid-phase epitaxial recrystallization, and solid-phase epitaxial crystallization, of amorphous (a) silicon (Si) created via ion-implantation are reviewed. The effects of hydrostatic, in-plane uniaxial, and normal uniaxial compressive stress on SPEG kinetics are...
متن کاملComparative study of two phase-field models for grain growth
0927-0256/$ see front matter 2009 Elsevier B.V. A doi:10.1016/j.commatsci.2009.03.037 * Corresponding author. Address: Dept. Metallurgy Katholieke Universiteit Leuven, Kasteelpark Arenbe Leuven, Belgium. E-mail address: [email protected] ( There exist different phase-field models for the simulation of grain growth in polycrystalline structures. In this paper, the model formulation, a...
متن کاملA novel approach for preparing Fe(TexSy) superconducting films: solid phase epitaxial growth from amorphous precursors
Fe(TexSy) films were fabricated on (100) SrTiO3 substrates from Fe(Te0.65S0.16) amorphous precursors by a solid phase epitaxial growth process under various background atmospheric conditions. Structural analysis by x-ray diffraction showed strong peaks corresponding to Fe(TexSy) phases, when the amorphous precursors were heated with Fe(Te0.8S0.2) sintered pellets. The crystallinity of the films...
متن کاملSolid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation
The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoelectronic devices to solar cells, more knowledge of the mechanisms governing the migration of the silicon amorphous/crystalline interface and dopant diffusion during solid phase epitaxy is needed. In this work, silicon ...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2014
ISSN: 2158-3226
DOI: 10.1063/1.4870242